| PART |
Description |
Maker |
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| D42C2 D42C7 D42C6 D40E1 D42C1 D41D8 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-202
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 3A I(C) | TO-202
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 2A I(C) | TO-202AC
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 3A I(C) | TO-202 晶体管|晶体管|叩| 30V的五（巴西）总裁| 3A条一（c）|02
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-202AC
|
ZF Electronics, Corp.
|
| 2SA1289 2SC3253 2SC3253S 2SC3253R 2SA1289R |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220AB
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-220AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
60V/5A High-Speed Switching Applications
|
ETC
SANYO[Sanyo Semicon Device]
|
| MMST5086 MMST5087 MMST5088 MMST5089 MMST7157 SST71 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
EZ-USB SX2™ High-Speed USB Interface Device
KIT EZ-USB SX2 DEVELOPMENT
IC, STATIC RAM, 512K X 8
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 500MA I(C) | SOT-23
Low-Cost 3.3V Zero Delay Buffer
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SOT-23VAR
PCIX I/O System Clock Generator with EMI Control Features
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 600MA I(C) | SOT-23
4-Mbit (128K x 36) Pipelined Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
KIT DEVELOPMENT EZ-USB FX2LP
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | SOT-23VAR
TRANSISTOR|BJT|NPN|25VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|NPN|30VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|PNP|50VV(BR)CEO|200MAI(C)|SOT-23VAR
|
|
| BD179-6 BD175-16 BD178-6 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）|26
|
Motorola Mobility Holdings, Inc.
|
| ECG48 ECG52 ECG36 ECG36MP ECG37MCP ECG50 ECG47 ECG |
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-3VAR
TRANSISTOR | BJT | PAIR | NPN | 140V V(BR)CEO | 12A I(C) | TO-3VAR
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 140V V(BR)CEO | 12A I(C) | TO-3VAR 晶体管|晶体管|一对|互补| 140伏特五（巴西）总裁| 12A条一（c）|VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|02
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 8A I(C) | TO-220AB
|
Electronic Theatre Controls, Inc.
Xilinx, Inc.
|
| PZT651T1/D PZT651T3 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA
NPN Silicon Planar Epitaxial Transistor NPN硅外延平面晶体管
|
HIROSE ELECTRIC Co., Ltd.
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| BCX29 BF299 BF298 BFR58 BC312 MH7301 BF294 BC533 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-39
MAX 3000A CPLD 512 MC 208-PQFP
晶体管|晶体管|叩| 160V五（巴西）总裁| 100mA的一c）| TO - 220AB现有
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 晶体管|晶体管|叩| 160V五（巴西）总裁| 100mA的一（c）| TO - 39封装
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | TO-92
|
TE Connectivity, Ltd.
|
| 2SC4211-6 2SC4211-7 2SC4211-5 2SD1913S 2SC4640S 2S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|的SOT - 23VAR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|92
|
Rohm Co., Ltd.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
